Micron Technology has demonstrated the industry's first 512GB DDR5 registered DIMM, a memory module dense enough to put 12 terabytes of DRAM in a single 24-slot two-socket server. The Boise, Idaho company revealed the part on September 15, 2026, and said AMD and Intel are already validating it for their next-generation server platforms.
TSV stacking and 9,200 MT/s
The 512GB RDIMM uses advanced vertical interconnect packaging, with through-silicon vias (TSVs) stacking multiple DRAM dies inside a single package. Speeds top out at 9,200 MT/s, and Micron claims the module cuts operating power by more than 60 percent versus four traditional 128GB RDIMMs occupying the same slot count.
Ecosystem partners: AMD and Intel
"A 512GB RDIMM enables multi-terabyte servers, supporting larger AI and database workloads, greater virtualization density and improved power efficiency," said Raj Narasimhan, Micron's senior vice president for compute and networking.
Amit Goel of AMD confirmed engineering collaboration on the module, and Intel's Karin Eibschitz Segal said the chip giant is working with Micron to validate the part for future Xeon-class server platforms.
Timing: volume in 2H27
Volume production is scheduled for the second half of 2027, positioning Micron directly against Samsung and SK hynix as hyperscalers push per-socket memory capacity to feed inference-heavy AI workloads. The launch dovetails with the broader "AI memory race" thesis that has lifted DRAM makers' revenue for three straight quarters, most recently in the Dimensity 9600 Pro launch that pushed the industry into LPDDR6.
Reporting based on coverage from Micron, Notebookcheck and Seoul Economic Daily.